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Evaluating NAND Technology
SLC vs MLC vs TLC vs QLC
Flash memory is a type of non-volatile memory that retains data without power. It stores information using an array of floating gate transistors, also known as memory cells.
NAND Flash is a specific type of Flash memory where read, write, and erase operations are performed in blocks, similar in concept to how hard disk drives (HDDs) manage data.
There are four primary types of NAND Flash, classified by how many bits are stored per memory cell:
- Single-Level Cell (SLC) — 1 bit per cell
- Highest endurance and performance
- 30,000 - 100,000 Program/Erase Cycles
- Ideal for industrial and defense-grade applications
- Multi-Level Cell (MLC) — 2 bits per cell
- Balanced endurance and capacity
- 3,000 Program/Erase Cycles
- Common in rugged embedded systems
- Triple-Level Cell (TLC) — 3 bits per cell
- Higher density and lower cost
- 3,000 Program/Erase Cycles
- Suitable for read-heavy industrial and defense workloads
- Quad-Level Cell (QLC) — 4 bits per cell
- Highest density and lowest cost per GB
- ~800 Program/Erase Cycles
- Best for commercial, low-write environments
- NOT RECOMMENDED FOR DEFENSE APPLICATIONS
As more bits are stored per cell, voltage thresholds become more granular, reducing design margins and increasing complexity. While this boosts storage density and reduces cost per gigabyte, it also introduces trade-offs.
Selecting the right NAND flash technology is critical for meeting application-specific requirements in performance, endurance, and reliability for defense and aerospace applications.
SLC (Single-Level Cell) NAND offers the highest endurance, fastest write speeds, and strongest data retention—ideal for mission-critical systems with frequent write cycles and long deployments.
MLC (Multi-Level Cell) strikes a balance between performance, endurance, and cost, making it suitable for many rugged embedded systems.
TLC (Triple-Level Cell) provides greater storage density and lower cost per bit but has reduced endurance and is better suited for read-intensive workloads.
QLC (Quad-Level Cell) delivers the highest density and lowest cost, but with significantly lower endurance, making it appropriate only for applications with minimal write cycles and less demanding operating environments.
MEMKOR collaborates closely with defense and aerospace customers to evaluate trade-offs and select the optimal NAND technology based on each application’s unique performance, endurance, and environmental requirements.
Trade-offs in reliability, endurance, and performance
TLC and QLC NAND offer higher storage density at lower cost but come with significant trade-offs in reliability, endurance, and performance visible in higher temperature operating environments. These lower-grade NAND types require the use of advanced Error Correction Code (ECC) and aggressive wear-leveling just to maintain acceptable reliability. Despite these measures, QLC NAND is generally not suitable for defense use, where long-term data integrity and environmental resilience are critical.
In write-intensive applications or extreme temperature environments, the performance of TLC and QLC SSDs degrades significantly. Write performance is extremely degraded on applications using TLC or QLC NAND in extremely low or high temperature operating environments. Manufactures quickly begin to throttle performance just to keep SSD on, in order to preserve the life of the NAND. This can critically impact mission readiness and data availability
SLC and MLC NAND based devices require much less powerful ECC/wear-leveling capability to achieve adequate data and device reliability. They perform exponentially better in extreme operating environments, starting around +45 degrees Celsius.
Applications
SLC (Single-Level Cell)
- Best for: Maximum endurance, reliability, and real-time performance.
- Defense Applications:
- Mission-critical systems (flight control, missile guidance, nuclear command & control)
- Black box recording and high-reliability avionics
- High-duty-cycle logging (e.g., UAV telemetry or satellite downlink buffering)
- Edge AI with continuous write demands in harsh environments
- Secure data-at-rest systems with extreme sanitization and longevity requirements
MLC (Multi-Level Cell) NAND
- Balanced performance and cost; not as robust as SLC but acceptable with proper ECC and wear-leveling.
- Defense Applications:
C4ISR systems with moderate write endurance needs- Ruggedized ground vehicles and mobile command posts
- Sensor fusion and ISR platforms
- Portable ground station storage where read/write cycles are moderate
- Secure boot and firmware storage
TLC (Triple-Level Cell) NAND
- Higher capacity, lower endurance; best used in read-intensive or lightly written environments with error correction.
- Defense Applications:
- Map databases for navigation systems
- Reference data or mission planning systems
- Video playback or review systems (non-critical video storage)
- Embedded training systems or simulation platforms
- Long-term archival in controlled environments
QLC NAND is used in consumer type of products such consumer media cards, mobile phones, and tablets. You wouldn't stick your mobile phone between the wheels of a F16 and expect it to work...
MEMKOR selects NAND to best fit your operation
All MEMKOR products are designed and purpose built for defense and aerospace applications, and therefore are only built with the highest quality SLC, MLC, and TLC NAND, depending on your requirements and operating environment.